Detector Module for Testing Silicon Carbide Semiconductor Devices
Army Research Laboratory
Saturday, August 01 2009
Page 1 of 2
This device prevents damage during testing by preventing catastrophic threshold
breaches.
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Long-term stress testing of silicon carbide
(SiC) semiconductor devices is
required to determine suitability for
power electronics applications. During
testing, preventable catastrophic failures
can occur due to drift in steady-state
operation or transients that shift the
device outside of its safe operating range.
Both steady-state and transient drift are
easily monitored values including temperature,
on-state resistance, voltage,
and current, as well as others. By measuring
and reacting to shifts in these values,
device damage can be minimized.
Figure 1. The complete, unisolated Threshold Detector System with the probe board (left), relay board (right), and a shared ±15 V DC LEM power supply.
These values can be converted to a
voltage allowing a variety of threshold
detectors to determine when the measured
values fall outside of safe limits.
This prevents damage by providing an
interlock signal if any monitored values
vary outside a preset limit. A
threshold detector/safety control
module has been developed that is versatile,
simple, reliable, and rugged.
Figure 1 displays the complete detector
module.
This threshold detector has applicability
to a wide variety of test applications
through the following capabilities:
Upper and lower window thresholds
adjustable between ±l3 V, accommodating
a wide range of probe or
transducer output ranges and offsets.
Latching with 10 mV*60 ns sensitivity.
Channels can be set for window compare
or single threshold detect on.
Four inputs combined by logical
AND functions.
Low hysteresis (typically or
less).
Low noise.
High common-mode rejection (between input and threshold references).
Most stages are designed to fail in a
safe mode.
Optical isolation provides safety, prevents
ground loops, and provides the
ability to float the output stage at any
voltage differential between references.
Powered using either DC power supplies
or batteries.
Highly reliable through simple
design and construction.
Easy to troubleshoot.
Figure 2. The system Signal Flow Diagram. The signals at gate U3’s inputs are discrete digital outputs from each of the comparators.
The threshold detector consists of
two different electronics boards. The
probe board consists of the window
comparators and simple multiplexing
circuitry. The relay board provides the
control signals to external relays or
interlocks. The comparator channels
on the probe board utilize two window
comparators, each to compare measured
values within preset limits. The
four channels of the window comparator
can be adjusted to accommodate a
wide range of voltage inputs (–13 V
thru +13 V), allowing use of many different
types of probe and transducer
outputs.
Each input channel has a user-set
upper and lower threshold reference.
The window comparator compares the
input value to its corresponding threshold
limit. In most cases, the inputs need
to be impedance-matched to the source
due to the high input impedance of the
comparators (AD-790s).
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