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Booth 823 Print E-mail
Jan 31 2008

ImageLaser Components IG (Hudson, NH) offers the SAT family of Silicon Avalanche Photodiodes targeted for the 1.06-micron detection region. The photodiodes feature quantum efficiency at 1,064 nm and low dark current and optimum capacitance for low-noise applications. The product is available with 80 micro-active areas and in different packaging configurations. The SAT family is the latest in the range of Si and InGaAs APDs offered. The Si APDs are available with a diameter of up to 3.0 mm and packaging options include TEC, fiber receptacle, and fiber pigtail.

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